Electronic Band Structure of InxGa1-xN under Pressure
نویسندگان
چکیده
منابع مشابه
Compositional Modulation in InxGa1-xN
Transmission Electron Microscopy and x-ray diffraction were used to study compositional modulation in InxGa1-x N layers grown with compositions close to the miscibility gap. The samples (0.34 < x < 0.8) were deposited by molecular beam epitaxy using either a 200-nm-thick AlN or GaN buffer layer grown on a sapphire substrate. In the TEM imaging mode this modulation is seen as black/white fringes...
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Core-level and valence band spectra of In x Ga1-x N films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (∼20 nm), the spectra contain both surface and bulk information due to the surface band bend...
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Luiz Cláudio de Carvalho,1,2,* André Schleife,1,2,3 Jürgen Furthmüller,1,2 and Friedhelm Bechstedt1,2 1Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany 2European Theoretical Spectroscopy Facility (ETSF) 3Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA (Received 15 ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2007
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.112.203